| Autor: |
K. Mitsunaga, Hirokazu Miyoshi, M. Nunoshita, N. Tsuji, M. Hatanaka, Hiroshi Onoda, Kiyohiko Sakakibara, T. Ohnakado, Natsuo Ajika |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Proceedings of International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.1995.499196 |
| Popis: |
A novel electron injection scheme for flash memory is proposed, where band-to-band tunneling induced hot electrons (BBHE) are employed in a P-channel cell. This proposed method ensures the realization of high program efficiency, high scalability and hot-hole-injection-free operation. We also demonstrate an application of the method to DINOR (DIvided bit-line NOR) program operation. An ultra-high-speed programming of 60 nsec/Byte can be achieved with a leakage current less than 1 mA by utilizing 512 Byte parallel programming. This new DINOR flash memory is shown to be the most promising for the realization of a low-voltage, high-performance and high-reliability flash memory of 64 Mbits and beyond. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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