ChemInform Abstract: On the Factors Determining the Morphology of Wet-Etched n- and p-GaP Single-Crystal Surfaces
Autor: | W. P. Gomes, H. H. Goossens |
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Rok vydání: | 2010 |
Předmět: | |
Zdroj: | ChemInform. 22 |
ISSN: | 0931-7597 |
DOI: | 10.1002/chin.199134014 |
Popis: | Wet etching of [111]-oriented GaP single crystals is performed in aqueous KOH solutions at different anodic potentials for p-type and at different anodic potentials and illumination levels for n-type samples. Furthermore, both n- and p-type crystals are photoetched in KOBr solutions at open-circuit potential. The influence of the rate-determining step on the etching morphology is shown |
Databáze: | OpenAIRE |
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