ChemInform Abstract: On the Factors Determining the Morphology of Wet-Etched n- and p-GaP Single-Crystal Surfaces

Autor: W. P. Gomes, H. H. Goossens
Rok vydání: 2010
Předmět:
Zdroj: ChemInform. 22
ISSN: 0931-7597
DOI: 10.1002/chin.199134014
Popis: Wet etching of [111]-oriented GaP single crystals is performed in aqueous KOH solutions at different anodic potentials for p-type and at different anodic potentials and illumination levels for n-type samples. Furthermore, both n- and p-type crystals are photoetched in KOBr solutions at open-circuit potential. The influence of the rate-determining step on the etching morphology is shown
Databáze: OpenAIRE