Investigation of InAs quantum dot growth for electrical spin injection devices
| Autor: | Wolfgang Löffler, S. Li, Michael Hetterich, J. Lupaca-Schomber, Heinz Kalt, Dimitri Litvinov, T. Passow, B. Daniel, J. Kvietkova, Dagmar Gerthsen, J. Fallert |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Photoluminescence
Condensed matter physics Condensed Matter::Other Chemistry Electroluminescence Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics law.invention Condensed Matter::Materials Science law Quantum dot Emission spectrum Luminescence Spectroscopy Molecular beam epitaxy Light-emitting diode |
| Zdroj: | physica status solidi c. 3:3943-3946 |
| ISSN: | 1610-1642 1862-6351 |
| Popis: | The influence of the growth conditions during molecular-beam epitaxy on the properties of InAs/GaAs quantum dot structures were systematically investigated by low temperature photoluminescence spectroscopy and transmission electron microscopy. The circular polarization degree (CPD) of the electroluminescence was compared for two quantum-dot spin-injection light-emitting diodes. The CPD depends on the position of the emission energy in the luminescence band. This correlation is similar for both samples despite the strongly different quantum dot morphologies. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text