A Reconfigurable Surface Acoustic Wave Filter on ZnO/AlGaN/GaN Heterostructure
| Autor: | Jose A. Bahamonde, Ioannis Kymissis |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Sideband business.industry Surface acoustic wave Bandwidth (signal processing) Wide-bandgap semiconductor Heterojunction Gallium nitride 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry 0103 physical sciences Optoelectronics Radio frequency Electrical and Electronic Engineering Center frequency business |
| Zdroj: | IEEE Transactions on Electron Devices. 67:4507-4514 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2020.3018697 |
| Popis: | With the increasing number of filters on radio frequency front ends, especially in handheld systems, such as cell phones, there has been a growing interest developing reconfigurable filters to accommodate all of the frequencies used modern communication protocols. This article demonstrates a voltage-tunable filter by utilizing the acoustoelectric effect between acoustic waves on zinc oxide (ZnO) and the 2-D electron gas (2DEG) in the interface of aluminum gallium nitride (AlGaN) and gallium nitride (GaN). The device is capable of tuning the center frequency by up to 0.78%. Furthermore, the emergence of an accumulation region at the ZnO/AlGaN interface allows for control of the sideband rejection ratio by 16 dB and the bandwidth by 12 dB, demonstrating a degree of reconfigurability that is previously not reported. |
| Databáze: | OpenAIRE |
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