LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS

Autor:	S. L. RUMYANTSEV, N. PALA, M. S. SHUR, M. E. LEVINSHTEIN, P. A. IVANOV, M. ASIF KHAN, G. SIMIN, J. YANG, X. HU, A. TARAKJI, R. GASKA
Rok vydání:	2022
DOI:	10.1142/9789811252143_0039
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::74006583d402dacd103881a25b79163c https://doi.org/10.1142/9789811252143_0039 Zobrazit plný text záznamu