Radiation emission during the on state in a noncrystalline chalcogenide threshold switch

Autor:	P. J. Kisatsky, Peter Walsh, G. C. Vezzoli, L. W. Doremus
Rok vydání:	1974
Předmět:	Materials science Pulse (signal processing) business.industry Chalcogenide Solid angle General Physics and Astronomy Radiation Collimated light chemistry.chemical_compound Optics chemistry Electrode Optoelectronics Thin film business Intensity (heat transfer)
Zdroj:	Journal of Applied Physics. 45:4534-4538
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1663083
Popis:	Two types of radiation emission have been detected during the on state of threshold switching events in noncrystalline chalcogenide thin films having a transparent SnO2 (NESA) bottom electrode and a heat conducting top electrode. The common form of the radiation is an emission at about 1.2–1.4 μm which (i) is propagated through a wide solid angle, (ii) is relatively independent of time during the on‐state pulse (iii) has an integrated intensity which is approximately a linear function of on‐state power and a superlinear function of on‐state current, and (iv) requires a minimum on‐state current for initiation. The second type of emission is between 0.75 and 3 μm and is detected rather rarely. This latter emission has a characteristic intensity which is a steeply peaked function of on‐state time and appears to be possibly highly collimated. The peaked emission has been detected in pulsed modes using single set pulses and has also been detected continuously using low‐frequency repetitive threshold set pulses...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::73faccc6f0b8a6e359d157999d582889 https://doi.org/10.1063/1.1663083 Zobrazit plný text záznamu