Buried reconstruction inhibition of solid phase epitaxy of Ge on Si (111)
| Autor: | O. C. Hellman |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Materials science
Morphology (linguistics) Silicon business.industry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Epitaxy Surfaces Coatings and Films Amorphous solid law.invention Crystallography chemistry law Phase (matter) Optoelectronics Thin film Crystallization business Surface reconstruction |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:2825-2829 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.578951 |
| Popis: | We study the epitaxial crystallization of a thin film of amorphous Ge deposited at room temperature on Si (111). Silicon surface features which are buried beneath the Ge film are seen to affect the rate of crystallization. In particular, solid phase growth is observed to be enhanced at surface steps and defects in the surface reconstruction. We demonstrate that control of Ge crystallization morphology is possible through manipulation of Si surface structure. |
| Databáze: | OpenAIRE |
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