Preferential etchant for revealing crystallographic defects on (111) Te surface of CdTe crystals

Autor: R. K. Bagai, W.N. Borle, G.L. Seth, Geeta Mohan
Rok vydání: 1987
Předmět:
Zdroj: Journal of Crystal Growth. 85:386-388
ISSN: 0022-0248
DOI: 10.1016/0022-0248(87)90467-2
Popis: A new preferential etchant has been developed to delineate etch pits on the (111) Te surface of CdTe crystals. The etch pits formed are well defined conforming to the crystallographic orientation of the surface and reveal dislocations and other crystallographic defects.
Databáze: OpenAIRE