Low Dielectric Constant SiO2:C,F Films Prepared from Si(OC2H5)4/C4F8/Ar by Plasma-Enhanced CVD

Autor:	David Wei Zhang, Wei William Lee, Shi-Jin Ding, Ji-Tao Wang
Rok vydání:	2001
Předmět:	Permittivity Chemistry Process Chemistry and Technology Analytical chemistry Infrared spectroscopy Surfaces and Interfaces General Chemistry Plasma Dielectric symbols.namesake X-ray photoelectron spectroscopy Plasma-enhanced chemical vapor deposition symbols Thin film Raman spectroscopy
Zdroj:	Chemical Vapor Deposition. 7:142-146
ISSN:	1521-3862 0948-1907
DOI:	10.1002/1521-3862(200107)7:4<142::aid-cvde142>3.0.co;2-c
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::73e1b93cf6702012f5de3865b616842b https://doi.org/10.1002/1521-3862(200107)7:4<142::aid-cvde142>3.0.co Zobrazit plný text záznamu Plný text