Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
| Autor: | J. Provine, Peter Schindler, Anup L. Dadlani, Yongmin Kim, Jihwan An, Shinjita Acharya, Fritz B. Prinz |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Polymers and Plastics Analytical chemistry chemistry.chemical_element Nanotechnology 02 engineering and technology Crystal structure Dielectric 01 natural sciences law.invention Atomic layer deposition chemistry.chemical_compound law Aluminium 0103 physical sciences Crystallization Leakage (electronics) 010302 applied physics Metals and Alloys 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials chemistry Barium titanate Ceramics and Composites 0210 nano-technology Order of magnitude |
| Zdroj: | Acta Materialia. 117:153-159 |
| ISSN: | 1359-6454 |
| DOI: | 10.1016/j.actamat.2016.07.018 |
| Popis: | Plasma-enhanced atomic layer deposition (PEALD) of ultrathin (∼7 nm) slightly Ti-rich Ba x Ti y O z (BTO) films with different Al-doping concentration ([Al]/([Al] + [Ba] + [Ti]) = 0 to 22 at%) was studied. In particular, the effects of Al-doping in BTO on compositional, crystallographic and electrical properties were investigated. Previously, BTO films with a Ti cation composition, [Ti]/([Ba] + [Ti]) = ∼60 at% was reported to be advantageous for crystallization, resulting in superior dielectric properties. These Ti-rich BTO films, however, suffered from high leakage currents, necessitating the change in its crystalline structure as well as elemental composition. By incorporating Al 2 O 3 into the BTO films, the leakage current can be controlled, where the BTO films with an Al-doping concentration of 12 at% showed a leakage current reduced by one order of magnitude compared to un-doped BTO (i.e., ∼10 −7 to ∼10 −6 A/cm 2 at +1.6 V) without a significant drop of the dielectric constant (43,un-doped to 40, Al-doped). |
| Databáze: | OpenAIRE |
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