Development of crystal supporting system for diameter of 400mm silicon crystal growth
| Autor: | Hirotoshi Yamagishi, N Machida, N Takase, Y Shiraishi, J Matsubara, Kiyotaka Takano, T Iida, M Kuramoto |
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| Rok vydání: | 2001 |
| Předmět: |
Molten silicon
Materials science Silicon business.industry chemistry.chemical_element Crystal growth Condensed Matter Physics Inorganic Chemistry Monocrystalline silicon Crystal Crystallography chemistry Supporting system Materials Chemistry Optoelectronics Development (differential geometry) Ingot business |
| Zdroj: | Journal of Crystal Growth. 229:31-34 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(01)01045-4 |
| Popis: | The purpose of this project is the development of a crystal supporting system (CSS) for silicon crystals with large diameters of 400 mm. Amongst the many technical problems the one that the Super Silicon Crystal Research Institute Corp. (SSi) has directed its energies is to support a weight in excess of the ability of the Dash neck to support this weight. After considering various solutions, we developed a CSS that mechanically supports the silicon subsidiary cone formed between the Dash neck and crystal shoulder. Using this method, an approximately 400 kg ingot was successfully grown from 500 kg of molten silicon in a 36-in. quartz crucible. We confirmed that the CSS mechanism worked correctly through the entire crystal growth process. This paper presents some of the anticipated problems in the mechanical supporting method and the corresponding solutions. Finally, results from real crystal growth to test and verify machine operation are reported. |
| Databáze: | OpenAIRE |
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