Transport mechanisms in atomic-layer-deposited Al2O3 dielectrics

Autor:	S. Jakschik, U. Schröder, M. Specht, M. Städele
Rok vydání:	2004
Předmět:	Band bending Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Band gap Direct and indirect band gaps Dielectric Electron Quantum tunnelling Semimetal Poole–Frenkel effect
Zdroj:	Applied Physics Letters. 84:3076-3078
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1703840
Popis:	We analyze the field and temperature dependence of electron currents through atomic-layer-deposited thin (3.6–6 nm) sheets of Al2O3 which were annealed above the crystallization temperature. On the basis of electrical characterization and numerical simulation that includes trap-assisted transport as well as the band bending in the contact regions, we have identified three characteristic field regions in which the currents are dominated by elastic trap-assisted tunneling, Frenkel–Poole hopping, or Fowler–Nordheim tunneling. We find that the Frenkel–Poole traps lie in a narrow band about 1.2 eV below the conduction band minimum of Al2O3, whereas the energetic distribution of the elastic traps is broad and has a tail that reaches far into the band gap. The numerical results are compatible with a Si/Al2O3 conduction band offset of 2.7 eV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::73d342487e74bab90178f5fd6085b9da https://doi.org/10.1063/1.1703840 Zobrazit plný text záznamu