A smart power process in 'direct-bonded' silicon on insulator with 150 V VDMOS, CMOS and bipolar transistors
| Autor: | H.-G. Graf, T. Ifstrom, U. Apel, Christine Harendt, B. Hofflinger |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
Wafer bonding business.industry Transistor Bipolar junction transistor Silicon on insulator Direct bonding Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Threshold voltage CMOS law Optoelectronics Power semiconductor device Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 19:153-156 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(92)90412-k |
| Popis: | Silicon direct bonding (SDB) has been used to produce silicon-on-insulator (SOI) substrates for dielectrically isolated power devices. The up-drain VDMOS transistors give a low specific on-resistance and allow multiple isolated outputs. The CMOS devices have down to 2 ?m drawn channel lengths, here used in a channelless sea of gates semicustom array. The vertical NPN and lateral PNP transistors show characteristics comparable to those of a 60 V bipolar process and make advanced analogue functions possible. The presented process allows fabrication of a 2 A half-bridge circuit with integrated drivers and logic functions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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