Kinetics of impurity gettering on buried defects created by MeV argon implantation

Autor:	J.J. Grob, P. Rohr, A. Grob, G. Mariani, J. Sevely
Rok vydání:	1996
Předmět:	Nuclear and High Energy Physics Materials science Argon Silicon Annealing (metallurgy) chemistry.chemical_element Molecular physics Ion implantation chemistry Getter Impurity Transmission electron microscopy Atomic physics Platinum Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 112:169-172
ISSN:	0168-583X
DOI:	10.1016/0168-583x(95)01014-9
Popis:	High energy argon ion implantation was used to form, in intentionally gold or platinum contamined silicon samples, a buried layer of efficient gettering sinks with low damage creation close to the surface. In any case, the implantation temperature was chosen to avoid partial or complete amorphization. Both nature and long term stability of these centers have been determined by Transmission Electron Microscopy (TEM) and channeling measurements. The kinetics of gold accumulation on these sinks was measured using high sensitivity Rutherford Backscattering (RBS) analysis as a function of implantation dose and annealing temperature. The effect of initial metallic contamination concentration was also investigated. The results are discussed using a model which takes into account a trapping-detrapping reaction and an impurity dependent annealing behaviour of the gettering sites.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::73bcff6c6da6e528f4e86f53d70dfd7d https://doi.org/10.1016/0168-583x(95)01014-9 Zobrazit plný text záznamu Full Text from ScienceDirect