Fabrication of vertically conducting near ultraviolet LEDs on SiC substrates
| Autor: | Long Yan, Liang Chen, Gaoqiang Deng, Xu Han, Pengchong Li, Jingzhi Yin, Ye Yu, Yuantao Zhang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Fabrication business.industry 02 engineering and technology Chemical vapor deposition Electroluminescence 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Emission intensity law.invention Wavelength law 0103 physical sciences Optoelectronics General Materials Science Electrical and Electronic Engineering 0210 nano-technology business Intensity (heat transfer) Diode Light-emitting diode |
| Zdroj: | Superlattices and Microstructures. 125:348-355 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2018.09.027 |
| Popis: | In this work, GaN-based vertically conducting near ultraviolet light-emitting diodes (LEDs) were grown on n-SiC substrates by metal-organic chemical vapor deposition. 10 pairs or 20 pairs of Si-doped n-Al0.2Ga0.8N/n-GaN distributed Bragg reflectors (DBRs) were used to improve the performance of the LEDs. The central reflected wavelength of the DBRs structures agreed well with the emission wavelength of the LEDs. A 389 nm near ultraviolet electroluminescence (EL) emission peak could be clearly observed in all the LED samples in our study. The EL intensity of LEDs was obviously enhanced because of the application of DBRs. Angle-dependent EL spectra were measured as well. For all the measurement angle region, the near ultraviolet EL emission intensity of the LEDs with DBRs were higher than that of the LED without DBRs. |
| Databáze: | OpenAIRE |
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