Surface reaction of CH3SiH3 on Ge(100) and Si(100)
| Autor: | Masaki Fujiu, Junichi Murota, Masao Sakuraba, Toshinori Takatsuka, Takashi Matsuura |
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| Rok vydání: | 2000 |
| Předmět: |
Silicon
Chemistry Analytical chemistry General Physics and Astronomy Infrared spectroscopy chemistry.chemical_element Mineralogy Germanium Surfaces and Interfaces General Chemistry Chemical vapor deposition Partial pressure Condensed Matter Physics Surfaces Coatings and Films Adsorption Layer (electronics) Deposition (chemistry) |
| Zdroj: | Applied Surface Science. :156-160 |
| ISSN: | 0169-4332 |
| Popis: | Surface reaction of CH 3 SiH 3 on the Ge(100) and Si(100) surfaces was investigated in the low-temperature region of 400–500°C using ultraclean hot-wall low-pressure chemical vapor deposition (CVD) systems, where CH 3 SiH 3 was supplied at a partial pressure of 18 Pa for 0–240 min. On Ge(100), the concentrations of Si and C deposited at 400°C and 450°C saturate to the value corresponding to the single atomic layer, but those at 500°C increase continuously with exposure time. Nevertheless, at all the temperatures studied, the concentration of deposited Si is nearly the same as that of deposited C. In the case of SiH 4 exposure at 450°C at partial pressures of 6 and 60 Pa, it was found that the Ge atoms segregate on the top surface at the early stage of Si deposition. By comparing these results, it is considered that the adsorption of CH 3 SiH 3 suppresses the Ge segregation. On Si(100), the C deposition by CH 3 SiH 3 has a similar tendency to that on Ge(100), but the initial deposition efficiency is lower than that on Ge(100). Moreover, the FTIR/RAS Si-hydride peak shifts to the lower wave numbers after CH 3 SiH 3 exposure. These results suggest that CH 3 SiH 3 is adsorbed without breaking the SiC bond on Ge(100) and Si(100) at 400–500°C. |
| Databáze: | OpenAIRE |
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