Reliability characterizations of display driver IC on High-k/ metal-gate technology
| Autor: | Dong-Hoon Kim, Sang-chul Shin, Hyung-Nyung Park, Jungdong Kim, Jongwoo Park, Haebum Lee, In-Taek Ku, Kidan Bae, Hye-Jin Kim, Lira Hwang, Sangwoo Pae |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Engineering Display driver business.industry 020209 energy Electrical engineering 02 engineering and technology Integrated circuit 01 natural sciences law.invention Power consumption law 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering business Mobile device High-κ dielectric Leakage (electronics) |
| Zdroj: | 2016 IEEE International Reliability Physics Symposium (IRPS). |
| Popis: | Display Driver IC is used to operate the display panel of mobile devices, such as handheld smartphones and tablets. Low power consumption becomes very important in mobile segments, thus High-k (HK)/ metal-gate (MG) process was used to fabricate DDI products. In this paper, an abnormal leakage increase observed during HTOL will be discussed along with the physical mechanism and superb HTOL results after process fixes have been implemented. As result, final DDI product showed an excellent reliability results through 1500hrs of HTOL exceeding product end of life (EOL). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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