Equivalent noise generators in JG FET
| Autor: | G. Lecoy, D. Rigaud, D. Sodini |
|---|---|
| Rok vydání: | 1974 |
| Předmět: |
Capacitive coupling
Physics Noise temperature FET amplifier business.industry Noise spectral density Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Noise (electronics) Cutoff frequency Electronic Optical and Magnetic Materials Computer Science::Emerging Technologies Noise generator Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Hardware_LOGICDESIGN |
| Zdroj: | Solid-State Electronics. 17:11-16 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(74)90107-5 |
| Popis: | Van der Ziel has shown that at high frequencies the gate noise of a field effect transistor increases rapidly with increasing frequency. This effect is attributed to the thermal noise of the conducting channel and is caused by the capacitive coupling between the channel and the gate. Experimentally this effect can be shown to be negligible up to 3 MHz for n-type FET's 2 N 3966 where the cut off frequency is about 100 MHz. Experimental variation of the input noise current generator of the FET is then deduced. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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