A High-Temperature Model for GaN-HEMT Transistors and its Application to Resistive Mixer Design
| Autor: | Fariborz Lohrabi Pour, Jebreel M. Salem, Dong Sam Ha Life |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Resistive touchscreen
Materials science business.industry Local oscillator Transistor Gallium nitride Biasing High-electron-mobility transistor Temperature measurement law.invention chemistry.chemical_compound chemistry law Silicon carbide Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Circuits and Systems I: Regular Papers. 68:581-591 |
| ISSN: | 1558-0806 1549-8328 |
| DOI: | 10.1109/tcsi.2020.3039907 |
| Popis: | This article presents a high temperature model for gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC). The proposed model for the channel resistance $\text {R}_{\text {ds}}$ is based on an empirical nonlinear model. The model is applied to design a resistive mixer of a high temperature transceiver for downhole communications through a systematic approach and estimate the performance of the mixer. The proposed model matches well with measurement results of the mixer and accurately estimates its performance at temperatures up to 250 °C. The model is also applied to obtain the optimal gate bias voltage of the mixer for a given temperature. The optimal bias voltage scheme reduces the conversion loss of the mixer by a factor of 8.4 dB at 250 °C under the local oscillator power of −10 dBm. |
| Databáze: | OpenAIRE |
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