Real-time multivariable control of PECVD silicon nitride film properties
| Autor: | T. J. Knight, David W. Greve, Xu Cheng, Bruce H. Krogh |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Mass flow controller Integrated circuit Chemical vapor deposition Condensed Matter Physics Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Silicon nitride chemistry Control theory law Plasma-enhanced chemical vapor deposition Electronic engineering Process control Deposition (phase transition) Electrical and Electronic Engineering |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 10:137-146 |
| ISSN: | 0894-6507 |
| Popis: | This paper reports on the application of quadrupole mass spectrometry (QMS) sensing to real-time multivariable control of film properties in a plasma-enhanced CVD silicon nitride process. Process variables believed to be most important to film deposition are defined (i.e., disilane pressure, triaminosilane pressure, and dc bias voltage) and their responses to system inputs are modeled experimentally. Then, a real-time controller uses this information to manipulate the process variables and hence film performance in real time during film deposition. The relationships between gas concentrations and film performance are shown explicitly where the controller was used to drive the concentrations to constant setpoints. Also, an experiment investigating the effects of an out-of-calibration mass flow controller demonstrates the compensating ability of the real-time controller. The results indicate that in situ sensor-based control using quadrupole mass spectrometry can significantly assist in optimizing film properties, reducing drift during a run, reducing run-to-run drift, creating a better understanding of the process, and making the system tolerant to disturbances. |
| Databáze: | OpenAIRE |
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