On the Influence of Active Area Design on the Performance of SiC JBS Diodes
| Autor: | Lars Knoll, Giovanni Alfieri, Enea Bianda, A. Mihaila, Vinoth Kumar Sundaramoorthy, H. Bartolf, Renato Minamisawa, Munaf Rahimo |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Hexagonal cell Mechanical Engineering Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Engineering physics Mechanics of Materials 0103 physical sciences General Materials Science 0210 nano-technology business Diode Static behavior |
| Zdroj: | Materials Science Forum. 897:471-474 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.897.471 |
| Popis: | This paper presents an investigation regarding the influence of the active area design on the static and dynamic performance of SiC JBS diodes. The analysis has been performed on fabricated JBS diodes, rated for 1.7kV applications. For the active area layout, both stripe and hexagonal cell patterns have been used for the implanted p+ regions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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