21.2: Highly Reliable Oxide Thin Film Transistor with Novel Oxide Passivation Layers By All-Printing Processes

Autor:	Arae Sadanori, Sone Yuji, Kusayanagi Minehide, Ueda Naoyuki, Katsuyuki Yamada, Yukiko Hirano, Shinji Matsumoto, Yuki Nakamura, Saotome Ryoichi
Rok vydání:	2015
Předmět:	Imagination Materials science Chemical substance Passivation Printed electronics media_common.quotation_subject Equivalent oxide thickness Nanotechnology Science technology and society Oxide thin-film transistor Threshold voltage media_common
Zdroj:	SID Symposium Digest of Technical Papers. 46:278-281
ISSN:	0097-966X
DOI:	10.1002/sdtp.10475
Popis:	We have developed highly reliable oxide TFT arrays by allprinted maskless process from gate to passivation layers with 100 ppi RGB resolution. The threshold voltage shifts under positive and negative bias-temperature-stress at 50 °C after 105 seconds were less than 0.8 and 0.3 V, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7396123402489a0e65ef6875ac7a123a https://doi.org/10.1002/sdtp.10475 Zobrazit plný text záznamu Plný text