Effect of Deposition Time on Gd doped ZnO using Simultaneous RF and DC Sputtering
| Autor: | Nur Amaliyana Raship, Anis Suhaili Bakri, Muliana Tahan, Siti Nooraya Mohd Tawil, Khadijah Ismail, Nafarizal Nayan |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Band gap Doping Analytical chemistry 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Crystallinity Sputtering 0103 physical sciences Deposition (phase transition) Thin film 0210 nano-technology Wurtzite crystal structure |
| Zdroj: | 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). |
| Popis: | The effect of deposition time on physical properties of gadolinium (Gd) doped zinc oxide (ZnO) thin films were successfully investigated. The films were deposited using simultaneous direct current (DC) and radio frequency (RF) sputtering on a glass substrate. The deposition time varied at 15, 30, 45 and 60 minutes. The films were measured using XRD, FESEM, and UV-Vis spectrophotometer. XRD shows hexagonal wurtzite structure with a preferred c-axis orientation (002) phase for all the films. The films crystallinity is improved with increasing the deposition time up to 60 minutes. The film thickness shows an increment with increasing in deposition time which is 246, 315, 448 and 491 nm for 15, 30, 45 and 60 minutes, respectively. UV-Vis spectrophotometer for all the films shows good transmittance in the visible region with an average of 82% - 95%. The band gap of Gd doped ZnO thin films were 3.20, 3.23, 3.17 and 3.13 eV as deposition time increase from 15, 30, 45 and 60 minutes, respectively. |
| Databáze: | OpenAIRE |
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