Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs

Autor:	W. Caliebe, Andrzej Misiuk, J. Bak-Misiuk, P. Romanowski, Elżbieta Dynowska, Janusz Sadowski
Rok vydání:	2012
Předmět:	Materials science Condensed matter physics Annealing (metallurgy) Hydrostatic pressure Lattice distortion General Physics and Astronomy Molecular beam epitaxy Nanoclusters
Zdroj:	Acta Physica Polonica A. 121:903-905
ISSN:	1898-794X 0587-4246
DOI:	10.12693/aphyspola.121.903
Popis:	Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500 degrees C under ambient and enhanced hydrostatic pressure (1.1 GPa), of Ga1-xMnxAs/GaAs layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230 degrees C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::73890bf7bb6dce6bce9713250931bf97 https://doi.org/10.12693/aphyspola.121.903 Zobrazit plný text záznamu Plný text ve formátu PDF