Theoretical Model for Radiation Enhanced Diffusion and Redistribution of Impurities. Comparison with Experiments
Autor: | P. Baruch, J. C. Pfister, S. Loualiche, C. Lucas, J. P. Gailliard |
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Rok vydání: | 1982 |
Předmět: | |
Zdroj: | physica status solidi (a). 69:663-676 |
ISSN: | 1521-396X 0031-8965 |
DOI: | 10.1002/pssa.2210690229 |
Popis: | The redistribution of boron in silicon through high temperature proton irradiation is described. It is interpreted with a two-species model, where the impurity can exist either as a slow or as a fast diffuser, the transformation between these two species being induced through interaction with radiation defects. The two species could be the substitutional and the interstitial boron. The influence of experimental parameters, especially impurity concentration, beam current, temperature is studied and interpreted by taking into account the formation of impurity—defect complexes and direct vacancy—interstitial recombination. The following thermodynamical parameters are proposed for interstitial boron: Em = 1.2 eV, Sm = 0.14 k, D0 = 4 × 10−3 cm2/s. The self interstitial—vacancy and boron—interstitial capture radius would then be 1.4a and 4a respectively. Le phenomene de redistribution du bore dans le silicium par irradiation a haute temperature par des protons est decrit. Il est interprete par un modele dans lequel l'impurete peut se presenter sous deux formes, avec des coefficients de diffusion differents, et qui se transforment l'une en l'autre par interaction avec les defauts d'irradiation. Ces deux formes pourraient e'tre le bore substitutionnel et le bore interstitiel. L'influence des parametres experimentaux, en particulier concentration d'impuretes, flux d'irradiation, temperature est etudiee, et interpretee, en prenant en compte la formation de complexes impuretes—defauts, la recombinaison directe lacune—impurete. On propose, pour le bore interstitiel, les parametres thermodynamiques suivants: Em = 1,2 eV, Sm = 0,14 k, D0 = 4 × 10−3 cm2/s, et les rayons de capture lacune—auto interstitie let lacune—bore interstitiel respectivement 1,4a et 4a. |
Databáze: | OpenAIRE |
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