Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs

Autor: Kei May Lau, Huaxing Jiang, Chak Wah Tang, Renqiang Zhu
Rok vydání: 2021
Předmět:
Zdroj: IEEE Electron Device Letters. 42:970-973
ISSN: 1558-0563
0741-3106
DOI: 10.1109/led.2021.3080260
Popis: In this letter, we report the influence of p-GaN body doping concentration on the ON-state performance of vertical GaN trench MOSFETs. Decreasing the p-GaN body doping concentration leads to an enhanced maximum drain current ( ${I} _{D,\max}$ ), reduced specific ON-resistance ( ${R} _{ \mathrm{\scriptscriptstyle ON},\mathrm{sp}}$ ), but also a decreased threshold voltage ( ${V} _{th}$ ), suggesting that the p-GaN doping plays an important role in balancing the ${V} _{th}$ , ${R} _{ \mathrm{\scriptscriptstyle ON},\mathrm{sp}}$ and ${I} _{D,\max}$ in vertical GaN trench MOSFETs. Resulting from the tuning of Mg concentration in the p-GaN, we demonstrate high ON-performance including a high ${I} _{D,\max}$ of 2.8 kA/cm2, a low ${R} _{ \mathrm{\scriptscriptstyle ON},\mathrm{sp}}$ of 0.87 $\text{m}\Omega \cdot $ cm2, a large ${V} _{th}$ of 4.8 V in a quasi-vertical GaN trench MOSFET on sapphire with a 2.5- $\mu \text{m}$ -thick drift layer, while maintaining a breakdown voltage of 273 V.
Databáze: OpenAIRE