Low-energy Ion Scattering Measurement of Near-surface Damage Induced by the SiO2 Dry-Etching Process

Autor:	Masayuki Kojima, Fumihiko Uchida, Kiyomi Katsuyama, Miyako Matsui, Takafumi Tokunaga
Rok vydání:	1998
Předmět:	Crystallinity Materials science Low-energy ion scattering Scattering technology industry and agriculture General Engineering Analytical chemistry General Physics and Astronomy Dry etching Reactive-ion etching Spectroscopy Layer (electronics) Ion
Zdroj:	Japanese Journal of Applied Physics. 37:2043
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.37.2043
Popis:	Si(100) surface crystallinity after dry etching was measured using low-energy ion scattering spectroscopy (LEIS). We used 4-keV He+ ions as the incident beam, and neutral particles back-scattered at 180° were detected. A heavily damaged layer was observed immediately after reactive ion etching. After the heavily damaged layer was removed using a post-etch treatment, channeling and focusing effects were observed. The presence of a modified layer was confirmed even after the suboxide-rich layers were removed, because the channeling and focusing effects were slightly weaker than those of the surface without dry etching.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::735d5685ef6f221a8f24ca576ad82a54 https://doi.org/10.1143/jjap.37.2043 Zobrazit plný text záznamu