Feedback Stabilization of a Negative-Capacitance Ferroelectric and its Application to Improve the f T of a MOSFET
| Autor: | Mani Vaidyanathan, Collin G. VanEssen, Prasad S. Gudem, Anirudh Aggarwal, Zhi Cheng Yuan, Diego Kienle |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor Hardware_PERFORMANCEANDRELIABILITY Integrated circuit 01 natural sciences Ferroelectricity Capacitance Electronic Optical and Magnetic Materials law.invention Current mirror Hardware_GENERAL law Logic gate 0103 physical sciences MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering business Hardware_LOGICDESIGN Negative impedance converter |
| Zdroj: | IEEE Transactions on Electron Devices. 68:5101-5107 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2021.3108125 |
| Popis: | We propose a parallel negative-capacitance field-effect transistor (P-NCFET) structure, in which a ferroelectric operating in its negative-capacitance region is placed in parallel with the gate and source terminals of a MOSFET. The P-NCFET is stabilized by combining careful matching of the ferroelectric with the gate capacitance along with simple feedback realized using current mirrors. The novel stabilization approach opens the possibility for a variety of new applications that exploit the negative capacitance of ferroelectrics to cancel capacitance in integrated circuits. As an example, we show the P-NCFET structure has a significantly higher unity-current-gain frequency ${f}_{T}$ compared to a conventional MOSFET. |
| Databáze: | OpenAIRE |
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