Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices
| Autor: | Stephan Menzel, Karsten Fleck, Rainer Waser, Susanne Hoffmann-Eifert, Ulrich Böttger, Nabeel Aslam |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Engineering Resistive touchscreen Work (thermodynamics) business.industry 02 engineering and technology Dissipation 021001 nanoscience & nanotechnology 01 natural sciences Resistive random-access memory chemistry.chemical_compound chemistry 0103 physical sciences Electronic engineering Strontium titanate 0210 nano-technology business Energy (signal processing) Random access Efficient energy use |
| Zdroj: | ESSDERC |
| DOI: | 10.1109/essderc.2016.7599611 |
| Popis: | Resistive random access memories based on redox phenomena (ReRAM) combine several advantages. Beside their good scalability, high endurance and fast switching speed they are also very energy efficient. This work presents a study of the SET kinetics of SrTiO 3 -based resistive switches covering the timescale from |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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