Effect of postannealing on properties of ZnO-SnO2 thin film transistors
| Autor: | Yusuke Kanaoka, Yoshiaki Sakurai, Kazuo Satoh, Yoshiharu Kakehi, Shuichi Murakami, Yoshiharu Yamada |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Electron mobility Amorphous semiconductors Materials science Annealing (metallurgy) business.industry Transistor Field effect 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Ambient air law.invention law Thin-film transistor Subthreshold swing 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 36:02C105 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.5003283 |
| Popis: | Herein, the influence of postannealing on the properties of ZnO-SnO2 (ZTO) thin-film transistors (TFTs) was investigated. Postannealing in ambient air induced recovery of the electrical properties of wet-etch-damaged TFTs and a decrease in the subthreshold swing. Also, the field effect mobility increased with increasing postannealing temperature. Further improvement of the electrical properties of ZTO TFTs was not obtained with a further increase in annealing time. After postannealing at 200 °C for 60 min in the air, the ZTO TFTs exhibited a field effect mobility of about 10 cm2/V s.Herein, the influence of postannealing on the properties of ZnO-SnO2 (ZTO) thin-film transistors (TFTs) was investigated. Postannealing in ambient air induced recovery of the electrical properties of wet-etch-damaged TFTs and a decrease in the subthreshold swing. Also, the field effect mobility increased with increasing postannealing temperature. Further improvement of the electrical properties of ZTO TFTs was not obtained with a further increase in annealing time. After postannealing at 200 °C for 60 min in the air, the ZTO TFTs exhibited a field effect mobility of about 10 cm2/V s. |
| Databáze: | OpenAIRE |
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