Autor: |
Ly Nguyen, Chenming Hu, Gene Hill, Michael H. Brodsky, Linda Milor, Michael Orshansky, Yeng-Kaung Peng |
Rok vydání: |
2000 |
Předmět: |
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Zdroj: |
SPIE Proceedings. |
ISSN: |
0277-786X |
DOI: |
10.1117/12.389050 |
Popis: |
Statistical characterization of gate CD variability of a production CMOS process reveals a large spatial intra-field component, strongly dependent on the local layout patterns. We present a novel measurement based characterization approach that is capable of capturing all the relevant CD variation patterns necessary for accurate circuit modeling and statistical design. A rigorous analysis of the impact of intra-field variability on circuit performance is undertaken. We show that intra-field CD variation has a significant detrimental effect on the overall circuit performance by reducing the average speed by up to 20 percent. We derive a model quantitatively relating intra- field CD variance delay degradation. We propose a mask-level spatial gate CD correction algorithm to reduce the intra- field and overall variability, resulting in circuit performance improvement, and provide an analytical model to evaluate the effectiveness of correction for variance reduction.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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