GaN-based light-emitting diodes prepared with shifted laser stealth dicing
| Autor: | W.S. Chen, J. Y. Chen, C. F. Shen, Shoou-Jinn Chang, C. S. Hsu, T. K. Ko, L. M. Chang, D. S. Kuo |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Laser cutting Gallium nitride 02 engineering and technology Condensed Matter Physics Laser Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound 020210 optoelectronics & photonics Optics chemistry law 0202 electrical engineering electronic engineering information engineering Microelectronics Optoelectronics Wafer dicing Electrical and Electronic Engineering Photonics business Diode Light-emitting diode |
| Zdroj: | Journal of Display Technology. :1-1 |
| ISSN: | 1558-9323 1551-319X |
| Popis: | We propose a simple shifted laser stealth dicing (shifted-LSD) method to enhance output power of GaN-based blue light-emitting diodes (LEDs). Compared with the conventional method with only one nanosecond laser scribing from the front side, we performed two additional picosecond laser scribing on different positions of the backside surface. It was found that we could effectively enhance the LED output power from 132.14 to 139.11 mW using the shifted-LSD without degrading the electrical properties of the devices. It was also found such enhancement should be attributed to the enhanced LEE from the roughened sapphire substrate. |
| Databáze: | OpenAIRE |
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