Dopant Segregated Schottky Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack

Autor: Phyllis S. Lim, Dong Zhi Chi, Guo Qiang Lo, Yee-Chia Yeo
Rok vydání: 2009
Zdroj: ECS Meeting Abstracts. :2395-2395
ISSN: 2151-2043
Popis: not Available.
Databáze: OpenAIRE