Structural properties of interfaces between II-VI and III-V semiconductors

Autor:	K. Saminadayar, Guy Feuillet, Y. Gobil, Serge Tatarenko, A. C. Chami, E. Ligeon, Joel Cibert, Pierre-Henri Jouneau
Rok vydání:	1991
Předmět:	Focus (computing) Semiconductor Materials science business.industry Microscopy High resolution Nanotechnology Condensed Matter Physics business Mathematical Physics Atomic and Molecular Physics and Optics Molecular beam epitaxy
Zdroj:	Physica Scripta. :268-272
ISSN:	1402-4896 0031-8949
DOI:	10.1088/0031-8949/1991/t35/053
Popis:	We want to review recent structural investigations of the heteroepitaxial interfaces between II-VI semiconductors deposited by Molecular Beam Epitaxy and GaAs substrates. The structure of the relaxed interfaces will firstly be dealt with by reference to High Resolution Microscopy results. The second part will mainly focus on the way growth proceeds in its early stages as determined from diverse investigations involving very thin deposits.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::73344f5b3be9b5e4633ba670c19fd031 https://doi.org/10.1088/0031-8949/1991/t35/053 Zobrazit plný text záznamu