Catastrophic Optical Damage of GaN-Based Diode Lasers: Sequence of Events, Damage Pattern, and Comparison with GaAs-Based Devices
| Autor: | Giovanna Mura, Jens W. Tomm, Bruno Acklin, Martin Hempel, Massimo Vanzi, Robert Kernke |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Catastrophic optical damage Materials science Solid-state physics Aperture business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Laser 01 natural sciences Waveguide (optics) Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Energy (signal processing) Diode Degradation (telecommunications) |
| Zdroj: | Journal of Electronic Materials. 47:4959-4963 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Gallium-nitride-based diode lasers were intentionally damaged using single sub-μs current pulses. This approach provoked catastrophic optical damage, a known sudden degradation mechanism, which becomes evident as surface modification at the aperture, where the 450-nm laser emission leaves the waveguide of the device. Subsequently, we analyzed the related damage pattern inside the device. Knowledge about the operating conditions, degradation time, and energy introduced into the defect allows estimates of the temperature during the process (∼ 1000°C) and defect propagation velocity (110 μm/μs). Further analysis of this data allows for conclusions regarding the mechanisms that govern defect creation at the surface and defect propagation inside the device. Moreover, we compared these findings with earlier results obtained from gallium-arsenide-based devices and find similarities in the overall scenario, while the defect initialization and defect pattern are strikingly different. |
| Databáze: | OpenAIRE |
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