| Autor: |
Jesmin Haq, Vinh Lam, Shen Dongna, Po-Kang Wang, Guenole Jan, Luc Thomas, K. Pi, Huanlong Liu, Kenlin Huang, Ru-Ying Tong, Terry Torng, Jeffrey Teng, Le Son, Renren He, Yu-Jen Wang, Jian Zhu, Yuan-Jen Lee, Tom Zhong |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers. |
| Popis: |
We present major breakthroughs in MTJ design for STT-MRAM applications allowing reliable write for pulse lengths down to 1.5ns, data retention up to 125°C for 10 years and full compatibility with BEOL process up to 400°C for 1 hour. We have successfully integrated the novel structure onto an 8Mbit test chip. We demonstrate writing of every single cell in the array using sub-5ns pulses over a wide temperature range without using any error correction. We also show that sensing times of 4ns are sufficient to read every data cell. The inherent scalability of the design makes it a prime candidate for universal embedded non-volatile memories down to the 28nm node and beyond. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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