High-Speed 1550-nm Avalanche Photodiode Based on InAlAs-Multiplicaltion and Mesa-Structure
| Autor: | Wen-Jeng Ho, Yen-Chu Li, Chia-Chun Yu, Po-Ju Lin, Chi-Jen Teng, Jheng-Jie Liu |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Bandwidth (signal processing) 02 engineering and technology Avalanche photodiode 01 natural sciences Temperature measurement Capacitance Mesa 010309 optics 020210 optoelectronics & photonics 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics business computer computer.programming_language Dark current |
| Zdroj: | 2020 Opto-Electronics and Communications Conference (OECC). |
| DOI: | 10.1109/oecc48412.2020.9273555 |
| Popis: | High-speed mesa-structure avalanche photodiodes with dual-InGaAs absorption-layer and InAlAs multiplication-layer were fabricated and characterized. The 3-dB frequency of 17.7 GHz and gain-bandwidth product of 105 GHz were obtained using a mesa diameter of 30 micrometers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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