First-principle Extraction of Surface Roughness in Si/Oxide Interfaces

Autor:	Marton Voros, Seonghoon Jin, Dae Sin Kim, Woosung Choi, Yong-Hee Park, Kantawong Vuttivorakulchai, Uihui Kwon, Mohammad Ali Pourghaderi, Byounghak Lee
Rok vydání:	2021
Předmět:	chemistry.chemical_compound Materials science chemistry Impurity Extraction (chemistry) Autocorrelation Surface roughness Oxide chemistry.chemical_element First principle Germanium Surface finish Composite material
Zdroj:	2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
DOI:	10.1109/sispad54002.2021.9592577
Popis:	A novel algorithm is introduced to extract the electrical roughness at the first principle level. The autocorrelation and root-mean-squared height of roughness spectrum are extracted for 3×3 nm2 Si/SiO 2 samples. As an application, the impact of Ge-O bond on electrical roughness is demonstrated. The result concludes that electrical roughness of a given interface can be substantially larger than geometrical values.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7309c01dbd04466845bfe4e015b87f71 https://doi.org/10.1109/sispad54002.2021.9592577 Zobrazit plný text záznamu