Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization

Autor:	Shuji Nakamura, Kenji Fujito, James S. Speck, Yoshinobu Kawaguchi, Yuji Zhao, Chia-Yen Huang, Feng Wu, Shinichi Tanaka, Steven P. DenBaars
Rok vydání:	2013
Předmět:	Void (astronomy) Materials science Physics and Astronomy (miscellaneous) business.industry Wide-bandgap semiconductor law.invention Wavelength Transmission electron microscopy law Optoelectronics Growth rate business Quantum well Diode Light-emitting diode
Zdroj:	Applied Physics Letters. 102:091905
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.4794864
Popis:	We report on void defect formation in (202¯1¯) semipolar InGaN quantum wells (QWs) emitting in the green spectral region. Fluorescence and transmission electron microscopy studies indicate that this type of defect is associated with voids with {101¯1}, {101¯0}, and {0001¯} side facets in the QW region. Systematic growth studies show that this defect can be effectively suppressed by reducing the growth rate for the active region. Green light-emitting diodes (LEDs) with reduced active region growth rate showed enhanced power and wavelength performance. The improved LED performance is attributed to the absence of void defects in the active region.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7304ada67e11211dab5e4a78996723a4 https://doi.org/10.1063/1.4794864 Zobrazit plný text záznamu