Re-oxidation characteristics of oxynitrides on 3C- and 4H-SiC

Autor:	Vishnu K. Khemka, T.P. Chow, Ronald J. Gutmann, K. Chatty
Rok vydání:	1999
Předmět:	Materials science stomatognathic system chemistry Annealing (metallurgy) Inorganic chemistry Materials Chemistry chemistry.chemical_element Re oxidation Electrical and Electronic Engineering Condensed Matter Physics Nitrogen Electronic Optical and Magnetic Materials
Zdroj:	Journal of Electronic Materials. 28:161-166
ISSN:	1543-186X 0361-5235
DOI:	10.1007/s11664-999-0007-0
Popis:	N2O annealing of oxides in both Si and SiC is known to result in a similar accumulation of nitrogen at the semiconductor-oxide interface, but the reoxidation of oxynitrides is different in these materials. With Si, the nitrogen at the interfl£e is unaffected upon re-oxidation even under high oxidant flow conditions. With SiC, as shown in this paper, complete depletion of the nitrogen from the interface is observed with the re-oxidation of SiC oxynitrides for both 3C and 4H polytypes. The depletion of the nitrogen from the interface is strongly dependent on the re-oxidation temperature. Results are described and a possible mechanism proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::730052e776f9b452627f4e2b41e00afb https://doi.org/10.1007/s11664-999-0007-0 Zobrazit plný text záznamu Full text from SpringerLink