Integrated Single Photon Source of InAs Quantum Dot with Silicon-Based Photonic Circuits
| Autor: | Byung-Seok Choi, Kap-Joong Kim, Jung Jin Ju, Je-Hyung Kim, Jong-Hoi Kim, Kyu Young Kim, Chun Ju Youn, Young-Ho Ko, Won Seok Han |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Physics::Optics Quantum simulator 02 engineering and technology Quantum channel Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Quantum dot Single-photon source 0103 physical sciences Optoelectronics Quantum information Photonics 010306 general physics 0210 nano-technology Quantum information science business Quantum computer |
| Zdroj: | 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). |
| Popis: | A single photon source is an essential element for the photonic quantum information applications including the quantum communication, the quantum simulation, and the quantum computation [1,2]. Semiconductor quantum dots (QDs) have been widely considered as a promising platform for the single photon source due to their various advantages of manipulation and integration with various photonic elements. To realize the on-chip quantum devices, there have been numerous effort to integrate III-V QDs with silicon-based photonic circuits [3,4]. However the self-assembled QDs have inherent drawbacks of irregular size distribution and random position. To overcome these drawbacks, various methods have been studied to obtain the site-controlled QDs such as the pyramid, the inverted pyramid, the nanohole, and the spatially selective H incorporation techniques [5]. In this study, we obtained site-controlled InAs QDs by the selective-area growth (SAG) method and integrated single photon source with the silicon-based photonic circuits through the micro-transfer technique. |
| Databáze: | OpenAIRE |
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