Oxidation and crystallization behavior of calcium europium silicon nitride thin films during rapid thermal processing
| Autor: | M. de Jong, V.E. van Enter, E. van der Kolk, E.W. Schuring |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Metals and Alloys Analytical chemistry 02 engineering and technology Surfaces and Interfaces Substrate (electronics) Thermal treatment Sputter deposition Nitride 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid chemistry.chemical_compound Silicon nitride chemistry Rapid thermal processing 0103 physical sciences Materials Chemistry Thin film 0210 nano-technology |
| Zdroj: | Thin Solid Films. 603:342-347 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2016.01.055 |
| Popis: | Luminescent thin films were fabricated on silicon wafers using reactive magnetron sputtering of Ca, Si and Eu in Ar/N2 atmosphere. In order to activate the luminescence, the as-deposited nitride films were heated to 1100 °C by a rapid thermal processing treatment. X-ray diffraction measurements reveal the crystal phases that form during thermal treatment. By recording scanning electron microscopy images of the surface and the cross-section of the film at different radial locations, the formation of different layers with a thickness depending on the radial position is revealed. Energy dispersive x-ray spectroscopy analysis of these cross-sections reveals the formation of an oxide top layer and a nitride bottom layer. The thickness of the top layer increases as a function of radial position on the substrate and the thickness of the bottom layer decreases accordingly. The observation of different 4f 65d1 → 4f 7 Eu2 + luminescence emission bands at different radial positions correspond to divalent Eu doped Ca3Si2O4N2, Ca2SiO4 and CaSiO3, which is in agreement with the phases identified by X-ray diffraction analysis. A mechanism for the observed oxidation process of the nitride films is proposed that consists of a stepwise oxidation from the as-deposited amorphous nitride state to crystalline Ca3Si2O4N2, to Ca2SiO4 and finally CaSiO3. The oxidation rate and final state of oxidation show a strong temperature–time dependency during anneal treatment. |
| Databáze: | OpenAIRE |
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