Energy transfer between shallow centers and rare-earth ion cores:Er3+ion in silicon
| Autor: | Tom Gregorkiewicz, M. S. Bresler, H.H.P.Th. Bekman, J. M. Langer, D. T. X. Thao, Jurgen Michel, Lionel C. Kimerling |
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| Rok vydání: | 2000 |
| Předmět: | |
| Zdroj: | Physical Review B. 61:5369-5375 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.61.5369 |
| Popis: | Two-color optical spectroscopy is used to directly manipulate shallow levels available in Si:Er samples of different parameters. It is observed that the excitation energy provided by a laser operating in the visible can be temporarily stored by trapping photogenerated carriers at shallow centers available in the material. Subsequently, this energy can be transferred to the $4f$-electron core of the ${\mathrm{Er}}^{3+}$ ion in a trap ionization process induced by a mid-infrared pulse from a free-electron laser. In that way, Er-related luminescence at $1.5 \ensuremath{\mu}\mathrm{m}$ can be generated by an infrared pulse applied within several milliseconds after the band-to-band excitation pulse. By scanning the wavelength of the free-electron laser, ionization spectra of the shallow centers participating in the energy transfer are obtained, allowing for their identification. On that basis, the involvement of thermal donors is suggested. The results demonstrate that excitation of Er ions in Si is a multichannel energy transfer process where shallow centers play an important role. |
| Databáze: | OpenAIRE |
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