Randomly oriented Angstrom‐scale microroughness at the Si(100)/SiO2interface probed by optical second harmonic generation

Autor:	Michael C. Downer, John K. Lowell, Alain C. Diebold, B. Doris, Jerry I. Dadap, Q. Deng
Rok vydání:	1994
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Physics::Optics Second-harmonic generation Surface finish Laser Polarization (waves) law.invention Optics law Femtosecond Sapphire Surface second harmonic generation Anisotropy business
Zdroj:	Applied Physics Letters. 64:2139-2141
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.111711
Popis:	Femtosecond pulses from a Kerr–Lens mode‐locked Ti:sapphire laser are used to generate second harmonic from a series of native‐oxidized Si(100)/SiO2 and hydrogen‐terminated Si(100) samples prepared with systematically varied interfacial microroughness with root‐mean‐square feature heights ranging from 0.6 to 4.3 A. Rotationally anisotropic second harmonic signals using different polarization configurations were measured in air and correlated with atomic force microscopy measurements. The results demonstrate rapid, noncontact, noninvasive measurement of Angstrom‐level Si(100)/SiO2 interface roughness by optical second harmonic generation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::72f2126428db297888472247e27a2366 https://doi.org/10.1063/1.111711 Zobrazit plný text záznamu