Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

Autor:	C.-Y. Liao, K.-Y. Hsiang, Z. -F. Lou, H.-C. Tseng, C.-Y. Lin, Z.-X. Li, F.-C. Hsieh, C.-C. Wang, F.-S. Chang, W.-C. Ray, Y.-Y. Tseng, S. T. Chang, T.-C. Chen, M. H. Lee
Rok vydání:	2022
Zdroj:	2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
DOI:	10.1109/vlsitechnologyandcir46769.2022.9830345
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::72d2e521ff8200f37f909f34855b04e8 https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830345 Zobrazit plný text záznamu