| Autor: |
Mingmin Yang, Yong Duan, Wenxia Kong, Jinzhe Zhang, Jianxin Wang, Qun Cai |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Chinese Physics B. |
| ISSN: |
1674-1056 |
| DOI: |
10.1088/1674-1056/acbc6a |
| Popis: |
Intercalation of atomic species is a practicable method for epitaxial graphene to adjust the electronic band structure and to tune the coupling between graphene and SiC substrate. In this work, atomically flat epitaxial graphene have been prepared on 4H-SiC(0001) using flash heating method in an ultrahigh vacuum system. Scanning tunneling microscopy, Raman spectroscopy and electrical transport measurements are utilized to investigate surface morphological structures and transport properties of pristine and Er-intercalated epitaxial graphene. It is found that Er atoms are intercalated underneath graphene layer after annealing at 900℃, and the intercalation site of Er atoms is located mainly at the buffer-layer/monolayer-graphene interface in monolayer domains. We also report the different behaviors of Er intercalation in monolayer and bilayer region, and the experimental results show that the diffusion barrier for Er intercalated atoms in the buffer-layer /monolayer interface is at least 0.2 eV higher than that in the first/second graphene-layer interface. The appearance of Er atoms is found to have distinct impacts on the electronic transports of epitaxial graphene on SiC(0001). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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