Doping of Cadmium Telluride with Germanium, Tin, and Lead
| Autor: | M. I. Ilashchuk, I. V. Nikolaevich, P. N. Gorlei, O. A. Parfenyuk |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Dopant General Chemical Engineering Doping Metals and Alloys Analytical chemistry chemistry.chemical_element Germanium Acceptor Cadmium telluride photovoltaics Inorganic Chemistry Condensed Matter::Materials Science chemistry Electrical resistivity and conductivity Condensed Matter::Superconductivity Materials Chemistry Condensed Matter::Strongly Correlated Electrons Tin Shallow donor |
| Zdroj: | Inorganic Materials. 41:1266-1269 |
| ISSN: | 1608-3172 0020-1685 |
| DOI: | 10.1007/s10789-005-0298-3 |
| Popis: | The transition of Ge-, Sn-, and Pb-doped CdTe crystals to semi-insulating behavior is analyzed in terms of a charge compensation model which includes shallow donor and acceptor states and defects with midgap energy levels. Model predictions are compared with experimental resistivity data for different doping levels. The deep levels are assumed to be due to dopant atoms. The results indicate that deep stoichiometric defects (V Cd and TeCd) have an insignificant effect on the electrical properties of the material. |
| Databáze: | OpenAIRE |
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