Improved process window using low-carbon Gexsil-x-yCyEpitaxial layers

Autor:	David W. Greve, A. C. Mocuta, R.M. Strong
Rok vydání:	1998
Předmět:	Thermal oxidation Materials science chemistry Silicon chemistry.chemical_element Process window Heterojunction Germanium Composite material Epitaxy Thermal diffusivity Boron
Zdroj:	MRS Proceedings. 535
ISSN:	1946-4274 0272-9172
Popis:	Processing of silicon-based heterojunction devices is severely constrained by the relaxation of strained epitaxial layers. Generally the equilbrium critical thickness cannot be exceeded if high-temperature process steps such as oxidation and diffusion are performed. In this paper, we report on the beneficial effects of small amounts of carbon ( 0.2%) added to germanium-silicon epitaxial layers. We will show that such low concentrations result in a substantial decrease of boron diffusivity and strain relaxation. We will also report on the fabrication of GexSil-x-yCy heterostructure MOS capacitors with a channel thickness of 300 A° and a maximum germanium fraction of 50% A thermal oxidation at 800 ‘C was performed resulting in good C(VG) characteristics along with improved hole confinement.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::72abb922582012367e5023ad82183f63 https://doi.org/10.1557/proc-535-287 Zobrazit plný text záznamu Full text from SpringerLink