Deep traps concentrations in ZnSe single crystals
| Autor: | V.Ya. Degoda, N. Yu. Pavlova, M. Alizadeh, M.S. Brodyn, G.P. Podust, B.V. Kozhushko |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering Photoconductivity Kinetics Analytical chemistry Phosphor 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Semiconductor Mechanics of Materials 0103 physical sciences General Materials Science 0210 nano-technology Luminescence business Recombination |
| Zdroj: | Materials Science and Engineering: B. 258:114570 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/j.mseb.2020.114570 |
| Popis: | The determination of concentrations of traps and luminescence centers, even at 50% accuracy, is an important task for luminescence kinetics and a conductivity of crystalline phosphors and semiconductors. In the case of high-single crystals, ZnSe samples, there were defined the deep traps concentrations by the curves of the thermally stimulated conductivity (TSC), temperature dependencies of photoconductivity and V-I curves at 85 K and 295 K. The measured concentration values are: ~1015–1017 cm−3. It was revealed, the concentrations of traps are significantly smaller than the concentrations of recombination centers. We estimated the luminescence centers concentrations, which determine broad-luminescent-wide band with a maximum at 630 nm (1.9 eV) and revealed that their concentration exceeds 1018 cm−3. |
| Databáze: | OpenAIRE |
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