Planar defects in 4H-SiC PiN diodes
| Autor: | T.P. Chow, K. G. Irvine, Lin Zhu, Joseph John Sumakeris, Mark E. Twigg, P. A. Lossee, Robert E. Stahlbush |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry PIN diode Wide-bandgap semiconductor Biasing Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Amorphous solid Crystallography Planar law Transmission electron microscopy Materials Chemistry Optoelectronics Grain boundary Electrical and Electronic Engineering business High-resolution transmission electron microscopy |
| Zdroj: | Journal of Electronic Materials. 34:351-356 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Using plan-view transmission electron microscopy (PVTEM), we have identified stacking faults (SFs) and planar defects in 4H-SiC PiN diodes subjected to electrical bias. Our observations suggest that not all planar defects seen in the PiN diodes are SFs. By performing diffraction-contrast imaging experiments using TEM, we can distinguish SFs from other planar defects. In addition, high-resolution TEM (HRTEM) imaging and analytical TEM have revealed that some planar defects consist of a 3-nm-wide SiC amorphous layer. Many of these planar defects are orientated parallel to {1 $$1\bar 100$$ 00} planes, whereas others are roughly parallel to the (0001) plane. The appearance of these planar defects suggests that they are grain boundaries. |
| Databáze: | OpenAIRE |
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